发明名称 |
Non-volatile memory including sub cell array and method of writing data thereto |
摘要 |
A non-volatile memory device, in which data values are determined by polarities at cell terminals, includes a memory cell array. The memory cell array is divided into multiple sub cell arrays, each sub cell array including at least one input/output line and an X-decoder/driver. First input/output lines included in different sub cell arrays may be simultaneously activated and bias voltages may be applied to the activated first input/output lines in accordance with the data values. The non-volatile memory device may be a bi-directional resistive random access memory (RRAM).
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申请公布号 |
US7701747(B2) |
申请公布日期 |
2010.04.20 |
申请号 |
US20070958432 |
申请日期 |
2007.12.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK JOON-MIN;KANG SANG-BEOM;CHO WOO-YEONG;OH HYUNG-ROK |
分类号 |
G11C7/00 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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