发明名称 |
Integrated circuit with a subsurface diode |
摘要 |
An integrated circuit includes a first and second diode connected in parallel. The first diode has a first breakdown voltage and has first P type region and first N type region adjacent to each other at the surface of the substrate of a substrate to form a lateral diode. The second diode has a second breakdown voltage less than the first breakdown voltage and has a second P type region and second N type region lateral adjacent to each other in the substrate to form a lateral diode below the surface The first and second N type regions overlap and the first and second P type region being electrically connected whereby the first and second diodes are in parallel.
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申请公布号 |
US7700977(B2) |
申请公布日期 |
2010.04.20 |
申请号 |
US20080037569 |
申请日期 |
2008.02.26 |
申请人 |
INTERSIL AMERICAS INC. |
发明人 |
CHURCH MICHAEL DAVID;KALNITSKY ALEXANDER;PEARCE LAWRENCE GEORGE;JAYNE MICHAEL RAY;JOCHUM THOMAS ANDREW |
分类号 |
H01L23/62 |
主分类号 |
H01L23/62 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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