发明名称 Integrated circuit with a subsurface diode
摘要 An integrated circuit includes a first and second diode connected in parallel. The first diode has a first breakdown voltage and has first P type region and first N type region adjacent to each other at the surface of the substrate of a substrate to form a lateral diode. The second diode has a second breakdown voltage less than the first breakdown voltage and has a second P type region and second N type region lateral adjacent to each other in the substrate to form a lateral diode below the surface The first and second N type regions overlap and the first and second P type region being electrically connected whereby the first and second diodes are in parallel.
申请公布号 US7700977(B2) 申请公布日期 2010.04.20
申请号 US20080037569 申请日期 2008.02.26
申请人 INTERSIL AMERICAS INC. 发明人 CHURCH MICHAEL DAVID;KALNITSKY ALEXANDER;PEARCE LAWRENCE GEORGE;JAYNE MICHAEL RAY;JOCHUM THOMAS ANDREW
分类号 H01L23/62 主分类号 H01L23/62
代理机构 代理人
主权项
地址