发明名称 Method and apparatus for a metallic dry-filling process
摘要 An iPVD system is programmed to deposit uniform material, such as a metallic material, into high aspect ratio nano-sized features on semiconductor substrates using a process that enhances the feature filling compared to the field deposition, while maximizing the size of the grain features in the deposited material opening at the top of the feature during the process. Sequential deposition and etching are provided by controlling DC and high density power levels and other parameters.
申请公布号 US7700484(B2) 申请公布日期 2010.04.20
申请号 US20050241722 申请日期 2005.09.30
申请人 TOKYO ELECTRON LIMITED 发明人 CERIO, JR. FRANK M.
分类号 H01L21/44;C23C14/00;C23C14/32;C25B13/00 主分类号 H01L21/44
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