发明名称 Substrate treatment method and film forming method, film forming apparatus, and computer program
摘要 There is provided a substrate treatment method performed on a substrate before forming a Cu film on a surface of a base material of the substrate. In the substrate treatment method, a substrate on which a Cu film is to be formed is prepared; and a specific treatment is performed on the substrate so that a crystalline orientation of the surface of the base material of the substrate has a small lattice mismatch with the Cu film.
申请公布号 US7699945(B2) 申请公布日期 2010.04.20
申请号 US20070859490 申请日期 2007.09.21
申请人 TOKYO ELECTRON LIMITED 发明人 YOSHII NAOKI;MATSUZAWA KOUMEI;KOJIMA YASUHIKO
分类号 C21D1/00;H01L21/44 主分类号 C21D1/00
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