发明名称 |
Substrate treatment method and film forming method, film forming apparatus, and computer program |
摘要 |
There is provided a substrate treatment method performed on a substrate before forming a Cu film on a surface of a base material of the substrate. In the substrate treatment method, a substrate on which a Cu film is to be formed is prepared; and a specific treatment is performed on the substrate so that a crystalline orientation of the surface of the base material of the substrate has a small lattice mismatch with the Cu film.
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申请公布号 |
US7699945(B2) |
申请公布日期 |
2010.04.20 |
申请号 |
US20070859490 |
申请日期 |
2007.09.21 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
YOSHII NAOKI;MATSUZAWA KOUMEI;KOJIMA YASUHIKO |
分类号 |
C21D1/00;H01L21/44 |
主分类号 |
C21D1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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