| 摘要 |
A voltage regulator for a bit line of a semiconductor memory cell is disclosed. In one embodiment, the voltage regulator includes an inverter, a feedback transistor, and a band gap reference voltage source. The inverter includes an inverter input connected to the bit line, and an inverter output. The feedback transistor includes a feedback source connected to the inverter input, and a feedback gate connected to the inverter output. The band gap reference voltage source predetermines the voltage to which the inverter input is regulated.
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