| 摘要 |
A method of producing a semiconductor disk represented by a composition formula [(Bi0.5Na0.5)x(Ba1−yRy)1−x]TiO3, in which R is at least one element of La, Dy, Eu, Gd and Y and x and y each satisfy 0≦̸x≦̸0.14, and 0.002≦̸y≦̸0.02 includes carrying out a sintering in an inert gas atmosphere with an oxygen concentration of 9 ppm to 1% and wherein a treatment at an elevated temperature in an oxidizing atmosphere after the sintering is not carried out.
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