SOI SUBSTRATE AND METHOD FOR PRODUCING SAME, SOLID-STATE IMAGE PICKUP DEVICE AND METHOD FOR PRODUCING SAME, AND IMAGE PICKUP APPARATUS

摘要

PURPOSE: A silicon on insulator(SOI) substrate, a solid-state image pick-up device, a method for manufacturing the same and an image pick-up device are provided to suppress white spot and a dark current by forming a photoelectric transformation unit in the silicon layer of the SOI substrate. CONSTITUTION: An oxide silicon layer(12) is formed on a silicon substrate(11). A silicon layer(13) is formed on the oxide silicon layer. A gattering layer(14) is formed on the silicon substrate. A damage layer(15) includes an impurity implant region which is formed on the oxide silicon layer. The damage layer has a gettering ability which captures metal impurity in the silicon layer.