发明名称 APPARATUS AND METHOD FOR MANUFACTURING POLY-SI THIN FILM
摘要 <p>PURPOSE: An apparatus and a method for manufacturing a poly-silicon thin film are provided to reduce a processing time by applying power on the target position of a conductive thin film. CONSTITUTION: A substrate loading/unloading unit(200) is installed on the lower side of a chamber(100). The substrate loading/unloading unit transfers a substrate which includes an amorphous silicon thin film and a conductive thin film. A power unit(300) is installed on the upper side of the chamber and includes electrodes. The electrodes are transferred to the manufacturing process direction and to the vertical direction of the manufacturing process direction.</p>
申请公布号 KR20100040156(A) 申请公布日期 2010.04.19
申请号 KR20080099252 申请日期 2008.10.09
申请人 ENSILTECH CORPORATION 发明人 RO, JAE SANG;HONG, WON EUI
分类号 H01L21/324;H01L29/786 主分类号 H01L21/324
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