| 摘要 |
FIELD: metallurgy. ^ SUBSTANCE: invention refers to chemical engineering and is used for obtaining the so called superconductors of the second generation. Method of obtaining two-sided superconductor of the second generation by means of chemical deposition method organometallic compounds from vapour phase in tubular chemical deposition reactor consists in the fact that first, in tubular reactor there deposited simultaneously on both sides of moving long base is buffer layer from vapours of organometallic compounds at 350-850C, and then in the above reactor there deposited simultaneously on both sides of moving long base is superconducting layer on the applied buffer layer from vapours of organometallic compounds at 650-850C; at that, heating of tubular reactor is performed by means of heating elements located along external surface of tubular reactor; tubular reactor pressure is kept equal to 0.1-100 Mbar, organometallic compounds are pre-evaporated in evaporator at 150-300C and supplied with carrier gas to tubular reactor deposition zone; base movement is carried out with speed of 1-10 m/hour, and tubular reactor is blown down on two opposite sides with gaseous flow. ^ EFFECT: invention allows applying buffer layer and superconducting layer simultaneously on both sides of moving long carrier tape, thus doubling critical current value of isolated conductor, enlarging the choice of types of used bases, decreasing deposition temperature at increase of qualitative characteristics of deposited buffer and superconducting layers, and increasing the pressure for carrying out the process. ^ 13 cl, 6 ex, 1 tbl, 10 dwg |
