| 摘要 |
<p>PURPOSE: A field effect transistor and a method for manufacturing the same are provided to electrically connect between a channel part, a source electrode and/or a drain electrode using an oxide semiconductor as a channel layer and oxynitride as the source electrode and/or the drain electrode. CONSTITUTION: A source electrode(13) and a drain electrode(14) are electrically connected to a channel. The channel includes an oxide semiconductor(11). The source electrode or the drain electrode includes oxynitride. The oxynitride is based on zinc(Zn) or indium(In). The major element for the oxide semiconductor and the major element for the oxynitride are identical.</p> |
