OXIDE THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: An oxide thin film transistor and a manufacturing method thereof are provided to use amorphous zinc oxide(ZnO)-type semiconductor as an active layer, thereby implementing superior uniformity. CONSTITUTION: A gate electrode(221) is formed on a substrate(210). A gate insulating film is formed on the substrate. A source electrode(222) and a drain electrode(223) are formed on the gate insulating film. An active layer(224) which is made of amorphous zinc oxide-type semiconductor is formed on the upper side of the source electrode and the drain electrode.