| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent a thin film property from deteriorating by patterning a conductive layer for a floating gate and vertically implanting an STI ion. CONSTITUTION: A tunnel insulation layer(101), a conductive layer for a floating gate(102) and a hard mask layer are successively formed on a semiconductor substrate(100). The hard mask layer and the conductive layer for the floating gate are patterned. An ion implantation is performed to form an ion implantation region(106) in the semiconductor substrate. The tunnel insulation layer and the semiconductor substrate are etched to form an element isolation trench(107). The ion implantation is vertically performed with respect to the surface of the semiconductor substrate.
|
