METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, THERMAL OXIDIZING PROCESSING METHOD, AND THERMAL OXIDIZING PROCESSING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, a thermal oxidizing processing method, and a thermal oxidizing processing apparatus which enable the formation of a gate oxide film having a highly uniform film thickness with respect to the thermal oxidizing processing method. SOLUTION: The method for manufacturing the semiconductor device includes the steps of: setting the back surface of a monitor wafer M1 counter to the front surface of a first product wafer #2; setting the back surface of the first product wafer #2 counter to the front surface of a second product wafer #3; placing the monitor wafer M1 and the first and second product wafers #2 and #3 with silicon nitride films 23 formed on their respective back surfaces in the thermal oxidizing processing apparatus; and forming a thermal oxide film on the surfaces of the monitor wafer M1 and the first and second product wafers #2 and #3 by the thermal oxidizing processing apparatus. COPYRIGHT: (C)2010,JPO&INPIT