发明名称 AMPLIFICATION IC DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To improve ESD (Electrostatic Discharge) tolerance of an amplification IC element, and reduce the number of parts. Ž<P>SOLUTION: One-chip amplification IC element is achieved by connecting a resistor or an inductor for ESD protection, and a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) whose 2 terminals out of 3 terminals are diode-connected, to an amplification element. Moreover, a varistor diode or a chip capacitor is externally connected. The amplification element is protected by the inductor or the resistor and the MOSFET, and the amplification IC element is protected by the varistor diode or the chip capacitor. Moreover, reduction of the number of parts and cost reduction and device miniaturization resulting from the reduced number of parts are achieved using a LPF (Low-Pass Filter) utilizing impedance of the resistor (inductor), the capacity of the MOSFET, and the capacity of the varistor diode (chip capacitor). Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010087567(A) 申请公布日期 2010.04.15
申请号 JP20080251148 申请日期 2008.09.29
申请人 SANYO ELECTRIC CO LTD;SANYO SEMICONDUCTOR CO LTD 发明人 ONODERA SHIGEO
分类号 H03F1/52;H01L21/822;H01L27/04;H04R3/00 主分类号 H03F1/52
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