| 摘要 |
<p>Disclosed is a variable resistance memory having a memory cell (3) which is composed of a variable resistance element (11) and a diode (12) connected in series. The diode (12) is composed of a first semiconductor region (16) of a first conductivity type, a second semiconductor region (18) of the first conductivity type which is lower in the atomic density of the first conductivity type impurities than the first semiconductor region (16), and a third semiconductor region (17) of a second conductivity type that is opposite to the first conductivity type. The diode (12) further comprises, at an end of the second semiconductor region (18), a fourth semiconductor region (19) of the first conductivity type which is higher in the atomic density of the first conductivity type impurities than the second semiconductor region (18).</p> |
