发明名称 |
METHOD FOR CONTACT FORMATION IN SEMICONDUCTOR DEVICE |
摘要 |
<p>The present disclosure is directed to the preparation of a semiconductor substrate, and metallization of a contact area on the substrate to produce a contact in a semiconductor device. The method includes pre-treating the substrate by ultra fast laser treatment of a contact area, and depositing an interconnect metal layer on the contact area to create a contact. The process may include depositing a layer of dielectric-forming material on the substrate and removing a portion of the dielectric material from the substrate to reveal a contact area, prior to laser treating and metallization.</p> |
申请公布号 |
WO2010042121(A1) |
申请公布日期 |
2010.04.15 |
申请号 |
WO2008US79392 |
申请日期 |
2008.10.09 |
申请人 |
SIONYX INC.;SAYLOR, STEPHEN;ALIE, SUSAN |
发明人 |
SAYLOR, STEPHEN;ALIE, SUSAN |
分类号 |
H01L21/768;H01L21/268 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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