| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a group III nitride-based compound semiconductor light emitting element which is improved in crystallinity of a semiconductor layer containing In in an active layer while relaxing heat treatment conditions of a p-type layer of the group III nitride-based compound semiconductor light emitting element. <P>SOLUTION: A "p" clad layer is grown on the active layer having the semiconductor layer containing In at first temperature (800 to 900°C), and then while only nitrogen gas and ammonia gas are circulated, a laminate of a semiconductor is heat-treated at second temperature (900 to 1,000°C) higher than the first temperature. Then, a "p" contact layer is grown on the "p" clad layer at third temperature (800 to 900°C) lower than the second temperature. <P>COPYRIGHT: (C)2010,JPO&INPIT |
