| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a group-III nitride semiconductor light-emitting element including a GaN substrate serving as a growth substrate, in which the GaN substrate is processed to have a membrane structure with high reproducibility. <P>SOLUTION: A stopper layer 11 of AlGaN having an Al compositional proportion of 20% is formed on a top surface of the GaN substrate 10. An n-type layer 12, an active layer 13, a p-type layer 14 and a p-electrode 15 are formed on the stopper layer 11, and the p-electrode is joined to a support substrate 16. Subsequently, a mask 20 having a center-opening pattern is formed, and a bottom surface of the GaN substrate 10 is subjected to PEC (photo enhanced chemical reaction) etching. Light to be irradiated has a wavelength corresponding to energy higher than a band gap of GaN, but lower than a band gap of AlGaN having the Al composition proportion of 20%. Since etching stops when it proceeds to a depth reaching the stopper layer 11, the membrane structure can be formed with high reproducibility. <P>COPYRIGHT: (C)2010,JPO&INPIT |
