| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a NAND type nonvolatile semiconductor memory device that uses a position of charge held in a memory in a direction perpendicular to a channel as an information amount, and a method of driving the same. <P>SOLUTION: The nonvolatile semiconductor memory device includes: a semiconductor substrate 1a including a first channel 8a, and a source region and a drain region 5a provided on both sides of the first channel 8a; a first insulating film 3a provided on the first channel 8a; a charge retention layer 4 provided on the first insulating film 3a; a second insulating film 3b provided on the charge retention layer 4; a second channel 8b provided on the second insulating film; and a source region and a drain region provided on both sides of the second channel 8b. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
