发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND PRODUCTION PROCESS OF THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device and a method for manufacturing it, which improve integration degree and reliability of the semiconductor memory device by using a transistor mounted in a peripheral circuit region as a power decoupling capacitor for preventing abrupt fluctuation of supply voltage. SOLUTION: The semiconductor memory device formed on a substrate which is divided into a core region and the peripheral circuit region includes a capacitor structure extended from the core region to the peripheral circuit region. Each portion of the capacitor structure functions as a memory cell capacitor in the core region; and functions as a first capacitor and a second capacitor in the peripheral circuit region. The combination of the first capacitor and the second capacitor functions as a first power decoupling capacitor. The transistor disposed in the peripheral circuit region functions as a second power decoupling capacitor. COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2010087517(A) |
申请公布日期 |
2010.04.15 |
申请号 |
JP20090226677 |
申请日期 |
2009.09.30 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
KIM SUNG-HOON |
分类号 |
H01L21/822;G11C11/4074;H01L21/8242;H01L27/04;H01L27/108 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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