| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, in which electrical characteristics are predicted with high accuracy and the electrical characteristics are controlled to become uniform by using a prediction expression. SOLUTION: Firstly, diffusion parameter values of a semiconductor device are obtained on the way of manufacturing the semiconductor device. Next, a target value of another diffusion parameter to be determined by a predetermined processing performed in a subsequent process is calculated. The diffusion parameter is calculated by substituting the obtained diffusion parameter values and a desired value of an electrical characteristic into a pre-obtained electrical characteristic prediction expression. The electrical characteristic prediction expression is an expression showing a correspondence relationship between the electrical characteristic of the semiconductor device and multiple types of diffusion parameters. Subsequently, processing conditions for predetermined processing in the subsequent process, which are set to achieve the target value, are determined. Then, the predetermined processing is performed in the subsequent process under the determined processing conditions. COPYRIGHT: (C)2010,JPO&INPIT |
