| 摘要 |
PROBLEM TO BE SOLVED: To suppress increase in the thickness of an insulating film in a photoelectric conversion apparatus which has a shared contact structure and a stacked contact structure. SOLUTION: This photoelectric conversion apparatus has a first insulating film, a second insulating film and a third insulating film, which are laminated in this order on a semiconductor substrate, and has a wire arranged on a third insulating film in the wiring layer disposed closest to the semiconductor substrate. A first plug and a second plug having a shared contact structure are arranged in the first insulating film. In the second insulating film and the third insulating film, a third plug and a first wire that constitute a dual damascene structure are arranged, respectively. Here, the first insulating film is used as an etching stop film, when etching is performed on the second insulating film, and the second insulating film is used as an etching stop film when etching is performed on the third insulating film. COPYRIGHT: (C)2010,JPO&INPIT
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