发明名称 MANUFACTURING METHOD OF FUNCTIONAL DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, WHICH USES FUNCTIONAL DEVICE MANUFACTURED BY THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method of a functional device which is superior in mass production and can improve performance without damaging the functional device at the time of manufacturing, and to provide a manufacturing method of the semiconductor device using the method. SOLUTION: In the manufacturing method of the functional device 10, a hollow 5 which spatially separates a part of a functional thin film 2 formed on one surface of a silicon substrate (substrate) 1 is formed in the silicon substrate 1. When forming and separating the functional device 10 on one surface of a silicon wafer (wafer) 3 becoming a base, a dicing sheet 7 is stuck to the other surface of the silicon wafer 3 and a temporary fixing sheet 6 is directly stuck to one surface. The silicon wafer 3 is cut from a temporary fixing sheet 6, the temporary fixing sheet 6 is peeled from the functional device 10 and then organic substances existing on surfaces of the functional devices 10 are removed by dry processing in the manufacturing method of the functional device. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010087280(A) 申请公布日期 2010.04.15
申请号 JP20080255413 申请日期 2008.09.30
申请人 PANASONIC ELECTRIC WORKS CO LTD 发明人 TSUJI KOJI;HAGIWARA YOSUKE;USHIYAMA NAOKI
分类号 H01L21/301;B81C99/00 主分类号 H01L21/301
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