| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the ohmic contact resistance of GaN-HEMT to ≤0.1 Ω/mm. Ž<P>SOLUTION: A semiconductor device includes a GaN layer 19, a base 13 including an active region 11a formed owing to the GaN layer, a gate electrode 15 formed on the active region, and first and second main electrodes 17a and 17b formed in the active region apart from and opposite each other with the gate electrode interposed. Then widths W<SB>C1</SB>and W<SB>C2</SB>of first and second overlap regions 29a and 29b where the first and second main electrodes overlap with the active region, respectively, in a gate width direction 31 are ≥10 times as large as a width W<SB>G</SB>of a third overlap region 35 where the gate electrode overlap with the active region in the gate width direction. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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