发明名称 |
METHOD OF FABRICATING DEVICE |
摘要 |
A method of fabricating a device is described. A substrate having at least two isolation structures is provided. A first oxide layer and a first conductive layer are sequentially formed on the substrate between the isolation structures. A first nitridation process is performed to form a first nitride layer on the surface of the first conductive layer and a first oxynitride layer on the surface of the isolation structures. A second oxide layer is formed on the first nitride layer and first oxynitride layer. A densification process is performed to oxidize the first oxynitride layer on the surface of the isolation structures. A second nitride layer and a third oxide layer are sequentially formed on the second oxide layer. A second nitridation process is performed to form a third nitride layer on the surface of the third oxide layer. A second conductive layer is formed on the third nitride layer.
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申请公布号 |
US2010093142(A1) |
申请公布日期 |
2010.04.15 |
申请号 |
US20080248049 |
申请日期 |
2008.10.09 |
申请人 |
POWERCHIP SEMICONDUCTOR CORP. |
发明人 |
HO CHING-YUAN;FUJITA HIROTAKE;CHIANG PO-JUI |
分类号 |
H01L21/336;H01L21/314 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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