发明名称 MICROELECTRONIC DEVICES INCLUDING MULTIPLE THROUGH-SILICON VIA STRUCTURES ON A CONDUCTIVE PAD AND METHODS OF FABRICATING THE SAME
摘要 A microelectronic structure includes a conductive pad on a substrate. The conductive pad includes first and second openings extending therethrough. A first conductive via on the conductive pad extends through the first opening in the conductive pad into the substrate. A second conductive via on the conductive pad adjacent the first conductive via extends through the second opening in the conductive pad into the substrate. At least one of the conductive vias may be electrically isolated from the conductive pad. Related devices and fabrication methods are also discussed.
申请公布号 US2010090338(A1) 申请公布日期 2010.04.15
申请号 US20090393109 申请日期 2009.02.26
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE HO JIN;JANG DONG HYEON;KIM NAM SEOG;LEE IN YOUNG;YIM HA YOUNG
分类号 H01L23/522;H01L21/768;H01L25/11 主分类号 H01L23/522
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