| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a flow rate sensor having a thin membrane having a high destruction withstand pressure. <P>SOLUTION: An opening part 43 of a silicon substrate 40 is covered with a thin-walled membrane 33. On the membrane 33, a sensing part 32 having a heater 81, an indirectly-heated resistor 82 and a temperature-measuring resistor 83 is formed. In wiring patterns constituting the sensing part 32, the temperature-measuring resistor 83 which is parallel to an opening edge 43a of the opening part 43 is arranged beyond 50μm to the inside from the opening edge 43a. Hereby, the flow rate sensor 30 having the thin membrane 33 having a high destruction withstand pressure can be achieved. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
