SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

摘要

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device easily improving the degree of integration of a nonvolatile memory cell even without thoroughly relying on miniaturization by a lithography technology. Ž<P>SOLUTION: This semiconductor device includes: a first insulation region formed on a semiconductor substrate; a first active region formed on the first insulation region; a first nonvolatile memory cell formed on the first active region; a second insulation region formed adjacently to the first insulation region on the semiconductor substrate and having a height smaller than that of the first insulation region in the channel width direction of the first nonvolatile memory cell; a second active region formed on the second insulation region and having an upper surface having a height smaller than that of the first insulation region in the channel width direction; and a second nonvolatile memory cell formed on the second active region and having a channel width direction identical to that of the first nonvolatile memory cell. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž