| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a configuration for preventing cracks from being generated by heat treatment when using an SOG film as an element separation insulation film. Ž<P>SOLUTION: A gate insulation film 4, a polycrystalline silicon film 5, an insulation film for processing, and then a trench 1a are formed on a silicon substrate 1. A silicon oxide film 8 is formed in the trench 1a, and a coating film made of polysilazane is filled to middle height of the polycrystalline silicon film 5. After forming a silicon nitride film 9 for preventing cracks, the coating film is formed further. Although the coating film is converted to silicon oxide films 2, 10 by heat treatment, cracks may be generated in the silicon oxide film 10 at an upper layer by thermal shrinkage stress, which can be prevented by the silicon nitride film 9. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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