| 发明名称 |
WATER-BASED POLISHING SLURRY FOR POLISHING SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE, AND POLISHING METHOD FOR THE SAME |
| 摘要 |
A water-based polishing slurry for polishing a silicon carbide single crystal, wherein the slurry comprises abrasive particles having a mean particle size of 1 to 400 nm and an inorganic acid, and the slurry has a pH of less than 2 at 20° C. |
| 申请公布号 |
US2010092366(A1) |
申请公布日期 |
2010.04.15 |
| 申请号 |
US20070520694 |
申请日期 |
2007.12.17 |
| 申请人 |
SHOWA DENKO K.K. |
发明人 |
KOGOI HISAO;OYANAGI NAOKI;SAKAGUCHI YASUYUKI |
| 分类号 |
C09K13/04;B24B1/00;B24B37/00;C01B31/36;C09K3/14;C30B29/36;H01L21/304 |
主分类号 |
C09K13/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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