| 摘要 |
<P>PROBLEM TO BE SOLVED: To simplify a manufacturing process of a thin film transistor substrate for TFT. <P>SOLUTION: The method of manufacturing the thin film transistor substrate for the liquid crystal display device includes: forming gate wiring including a gate line and a gate electrode, and common wiring including a common electrode on an insulating substrate; forming a gate insulating film covering the gate wiring and common wiring; forming a semiconductor pattern on the gate insulating film, a contact layer pattern on the semiconductor pattern, and a source electrode and a drain electrode on the contact layer respectively; forming data wiring including a data line coupled to the source electrode; forming a protective film pattern covering the data wiring other than a portion of the drain electrode; and forming a pixel electrode in a layer different from the data wiring, the source and drain electrodes being separated by photographic etching using a photosensitive film pattern including a first part disposed between the source electrode and drain electrode, a second part thicker than the first part, and a third part thinner than the first part. <P>COPYRIGHT: (C)2010,JPO&INPIT |
