| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for predicting characteristics of a thin film transistor by utilizing strength reduction caused by charging a layered film interface when measuring a depth direction of a layered film in SIMS. SOLUTION: The disclosed method includes: a first step of creating a depth direction profile using a secondary ion scattered by irradiating a plurality of samples with a primary ion while bringing a surface charged state into a non-neutralized state, the plurality of samples having the same layered structure as that of a thin film transistor and different ON currents; a second step of determining a reduction rate of a secondary ion strength of silicon on the basis of the profile; a third step of creating correlative curves of a secondary ion strength reduction rate and an ON current reduction degree; a fourth step of determining a reduction rate of the secondary ion strength of silicon before and after a semiconductor layer interface through procedures of the first and second steps (S2, S5); and a fifth step of determining the ON current reduction degree of a sample by collating the reduction rate of the secondary ion strength of the same determined in the fourth step with the correlative curves of the secondary ion strength reduction rate of silicon and the ON current reduction degree (S6). COPYRIGHT: (C)2010,JPO&INPIT
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