CLEANING AGENT FOR SEMICONDUCTOR SUBSTRATE SURFACE, METHOD OF CLEANING SEMICONDUCTOR DEVICE USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a cleaning agent for use in a cleaning step after a planarization polishing step in the step of manufacturing a semiconductor device which can remove organic substance pollution and particle pollution in short time on the surface of the semiconductor device, especially on the surface of the semiconductor device on which copper wiring is laid without causing the corrosion of the copper wiring and which can excellently clean the surface of a substrate, and a cleaning method using the same. SOLUTION: A cleaning agent is used after a chemical-mechanical polishing step in the step of manufacturing a semiconductor device on the surface of which copper wiring is laid. The cleaning agent for the surface of a semiconductor substrate contains a specific triazole compound or a specific tetrazole compound as a corrosion inhibitor compound. COPYRIGHT: (C)2010,JPO&INPIT