COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR LITHOGRAPHY, WHICH CONTAINS FLUORENE-CONTAINING RESIN

摘要

A composition for forming a resist underlayer film which has heat resistance required for use in a lithography process during production of a semiconductor device. The composition for forming a resist underlayer film contains a polymer which contains a unit structure represented by formula (1). (In the formula, R1, R2, R3 and R4 each represents an alkyl group having 1-10 carbon atoms, an aryl group having 6-20 carbon atoms, a halogen group, a nitro group or an amino group; R5 and R6 each represents a hydrogen atom, an alkyl group having 1-10 carbon atoms or a glycidyl group; Ar represents an arylene group having 6-20 carbon atoms; and n1 and n2 each represents an integer of 0-4, n3 represents an integer from 0 to (6-n5), n4 represents an integer from 0 to (6-n6), and n5 and n6 each represents an integer of 1-6, with n3 + n5 being an integer of 1-6 and n4 + n6 being an integer of 1-6.)