| 摘要 |
<p>PURPOSE: An EEPROM and a method for manufacturing the same are provided to increase cell density by forming a floating poly through a trench process. CONSTITUTION: A tunneling region is formed on a semiconductor substrate. A control gate region is separated into the tunneling region and a device isolation layer(290). A tunnel oxide layer(230) is formed on a trench region between the tunneling region and the control gate region. A poly silicon layer is formed on the upper side of the tunnel oxide layer.</p> |
