| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin-film transistor which can provide a semiconductor thin-film of preferable and uniform film quality on exposed surfaces of a substrate and of a gate insulating film and on exposed surfaces of a source electrode and of a drain electrode. Ž<P>SOLUTION: The thin-film transistor 1a includes source electrode and drain electrode, each composed of an oxide material layer 17-a composed of an electrically conductive oxide material and a metal material layer 17-b thereon, on a gate insulating film (insulating layer) 15 composed of an organic material, or oxide material, or silicon-based material. Exposed surfaces of the gate insulating film (insulating layer) 15 and of the oxide material layer 17-a of the source electrode 17s and drain electrode 17d are covered by a self-assembled layer 19. A semiconductor thin-film 21 is formed ranging between upper portions of the source electrode 17s and drain electrode 17d, covered by the self-assembled layer 19. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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