发明名称 Semiconductor laser device and manufacturing method therefor
摘要 Provides a semiconductor laser device, as well as a manufacturing method therefor, capable of solving a problem of yield decreases in a structure for mounting a nitride semiconductor laser element onto a mount member. The nitride semiconductor laser device has a submount 2, and a nitride semiconductor laser element 1 which is mounted on a surface of the submount 2 with a solder 4 so that a nitride semiconductor is exposed from a side face thereof. The solder 4 is positioned between the submount 2 and the nitride semiconductor laser element 1 and has a width W3 smaller than a lateral width W4 of the nitride semiconductor laser element 1.
申请公布号 US2010091808(A1) 申请公布日期 2010.04.15
申请号 US20090588334 申请日期 2009.10.13
申请人 SHARP KABUSHIKI KAISHA 发明人 TAKAHIRA YOSHIYUKI
分类号 H01S5/00;H01L33/00 主分类号 H01S5/00
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