| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent oxidation of a phase change layer in a following process by forming a protective layer without a void between the phase change layers. CONSTITUTION: A plurality of switching elements are formed on a semiconductor substrate(500). An interlayer insulation layer(511,512) is formed on the semiconductor substrate including a switching device. A heater(530) is formed in contact with the switching element in the interlayer insulation layer. A stack pattern of a phase change layer(540) and an upper electrode(550) is formed in contact with the heater on the interlayer insulation layer. An SiN based protective layer(560) is filled in a space between the stack patterns of the phase change layer and the upper electrode.
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