| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a back electrode for a semiconductor device, along with a semiconductor device containing the back electrode for a semiconductor device and a manufacturing method of the back electrode for semiconductor device, in which peeling is sufficiently suppressed and is excellent in characteristics even at a low resistance. <P>SOLUTION: The back electrode for a semiconductor device includes a nickel silicide layer, formed by heating a laminate of a nickel layer and a silicon layer or a nickel silicon alloy layer on a semiconductor, a titanium layer installed on the nickel silicide layer, and a metal layer installed on the titanium layer. The metal layer is at least one kind selected from a group consisting of a nickel layer, a platinum layer, a silver layer, a gold layer, a laminate of nickel layer and silver layer, and a laminate of nickel layer and gold layer. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
