| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve a problem in a capacitor including a lower electrode of a two-stage structure, wherein when a capacitive insulating film is formed with a part for exposing tungsten formed in a connection part between the upper stage and lower stage electrodes, oxide is formed between the capacitive insulating film and tungsten to increase the leak current of the capacitor. Ž<P>SOLUTION: This semiconductor device uses a capacitor including a capacitive insulating film sandwiched between an upper electrode and a lower electrode. The lower electrode of the capacitor is constructed by overlappingly connecting a plurality of electrode portions together. A lower stage electrode portion (plug type electrode 9) out of the adjacent electrode portions has columnar tungsten 4. The lower stage electrode portion further includes a conductive film (barrier film 3) that covers a side surface and a bottom surface of the tungsten 4. A top surface of the tungsten 4 is covered with a bottom portion of an upper stage electrode portion (cylinder type electrode 10). Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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