发明名称 THIN FILM TRANSISTOR SUBSTRATE FOR DISPLAY AND METHOD FOR MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a thin film transistor substrate for an active matrix type display, which removes troubles which may be caused by connecting a semiconductor film of a source-drain region to a semiconductor film formed under a scanning line. SOLUTION: The thin film transistor substrate 1 for the active matrix type display includes a TFT 20 in which at least a semiconductor film 13, a gate insulating film 14g and a gate electrode 15g are formed successively from the substrate 10 side. The thin film transistor substrate 1 is configured so as to have: conductive patterns 32 obtained by dividing a scanning line 31 including the gate electrode 15g as a part through a predetermined gap G; a semiconductor film 13 formed under the conductive patterns 32; and a wiring film 33 for connecting the divided conductive patterns 32. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010087303(A) 申请公布日期 2010.04.15
申请号 JP20080255689 申请日期 2008.09.30
申请人 DAINIPPON PRINTING CO LTD 发明人 ICHIMURA KOJI
分类号 H01L29/786;G02F1/1333;G02F1/1343;G02F1/1368;G09F9/30;H01L21/336;H01L29/417;H01L29/423;H01L29/49 主分类号 H01L29/786
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