| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent the generation of an yield caused by damage in a wafer since a chemical is discharged to the wafer, and the chemical is turned to be a conductor due to a potential difference between a charged section in piping and the wafer, and currents flow in the case of starting wafer treatment in such a state that a portion of a wiring line is charged when washing the wafer by the chemical. Ž<P>SOLUTION: When the chemical is discharged to the semiconductor wafer 1 so as to be washed, a nozzle 11 is moved to the outside of the semiconductor wafer 1 before the chemical is discharged to the semiconductor wafer 1, and the chemical is discharged in several seconds to the outside of the semiconductor wafer 1, the nozzle 11 is moved to the semiconductor wafer 1, and the chemical is discharged. Thus, it is possible to prevent the damage of a pattern on the semiconductor wafer 1 caused by charging, and to improve the yield of the manufacturing of the semiconductor device. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
