发明名称 TUNNELING MAGNETIC RESISTANCE ELEMENT EVALUATION METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of identifying a TMR (Tunneling Magnetic Resistance) element having the intrinsic breakdown voltage. Ž<P>SOLUTION: The resistance value R1 of the TMR element is measured immediately after applying a stress voltage to the TMR element (S1). After a prescribed interval of application of the stress voltage has elapsed, the TMR element is left standing, as it is, until the resistance value of the TMR element, which has dropped due to application of the stress voltage, returns to a resistance value close to the original one (S3). Subsequently, the resistance value R2 of the TMR element is measured, immediately after applying again the stress voltage to the TMR element (S4). The return rate of the resistance value of the TMR element is calculated, based on the resistance values R1 and R2 (S5). With the return rate close to 100%, the TMR element is determined to be a nondefective (S6). Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010087023(A) 申请公布日期 2010.04.15
申请号 JP20080251401 申请日期 2008.09.29
申请人 FUJITSU LTD 发明人 TAMANOI TAKESHI;SATO MASASHIGE
分类号 H01L43/12;G11B5/39;G11B5/455 主分类号 H01L43/12
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