| 发明名称 |
METHOD OF CLEANING SEMICONDUCTOR WAFER AND SEMICONDUCTOR WAFER |
| 摘要 |
A silicon wafer surface other than a defect is oxidized by ozone to form a silicon oxide film. A hydrofluoric acid is sprayed and subsequently a cleaning gas is sprayed onto the surface of the silicon wafer.
|
| 申请公布号 |
US2010093177(A1) |
申请公布日期 |
2010.04.15 |
| 申请号 |
US20090569929 |
申请日期 |
2009.09.30 |
| 申请人 |
SUMCO TECHXIV CORPORATION |
发明人 |
KOZASA KAZUAKI;KAWASAKI TOMONORI;SUGIMAN TAKAHISA;NISHIMURA HIRONORI |
| 分类号 |
H01L21/461 |
主分类号 |
H01L21/461 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
