发明名称 SOI SUBSTRATE AND METHOD FOR PRODUCING THE SAME, SOLID-STATE IMAGE PICKUP DEVICE AND METHOD FOR PRODUCING THE SAME, AND IMAGE PICKUP APPARATUS
摘要 A SOI substrate includes a silicon substrate, a silicon oxide layer arranged on the silicon substrate, a silicon layer arranged on the silicon oxide layer, a gettering layer arranged in the silicon substrate, and a damaged layer formed of an impurity-doped region arranged in the silicon oxide layer.
申请公布号 US2010090303(A1) 申请公布日期 2010.04.15
申请号 US20090574016 申请日期 2009.10.06
申请人 SONY CORPORATION 发明人 TAKIZAWA RITSUO
分类号 H01L31/0232;H01L21/02;H01L21/20;H01L21/265;H01L21/322;H01L21/762;H01L27/12;H01L27/146;H01L29/30;H01L31/18 主分类号 H01L31/0232
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