SEMICONDUCTOR DEVICE HAVING GATE DIELECTRIC DOPED WITH NITROGEN AND METHOD OF THE SAME

摘要

PURPOSE: A semiconductor device including a gate insulation layer doped with nitrogen and a manufacturing method thereof are provided to improve an on-current of a device in an NMOS region and a PMOS region while securing a gate leakage current property and preventing the reduction of a refresh time and the degradation of a GIDL property, and the reduction of a threshold voltage of a transistor of a cell region. CONSTITUTION: A semiconductor substrate(10) comprises a first region, a second region, and a third region. A first transistor of a first region includes a first gate insulation layer(14n) including the nitrogen with the first density. A second transistor on a second region includes a second gate insulation layer(14p) including the nitrogen with the second density. A third transistor on a third region includes a third gate insulation layer(14c) which does not include the nitrogen.