| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a homogeneous semiconductor film with low cost by reducing the variations of crystal particle size. <P>SOLUTION: A glass substrate 100 with a non-crystalline semiconductor film formed thereon is introduced into a process atmosphere with a temperature higher than or equal to that required for crystallization. The noncrystalline semiconductor film is rapidly heated by heat conduction from the process atmosphere and crystallized. More specifically, for example the temperature of the process atmosphere is raised at a temperature required for crystallization, thereafter the substrate with the semiconductor film 104 formed thereon is input into the process atmosphere. <P>COPYRIGHT: (C)2010,JPO&INPIT |
