| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an internal voltage control device, and a semiconductor memory device using the same. <P>SOLUTION: The internal voltage control device includes an enable signal generating unit for generating an enable signal in response to an active signal, and an internal voltage driving unit driven by the active signal and the enable signal to generate first and second driving signals by comparing the internal voltage with a reference voltage. The enable signal generating unit receives the second driving signal to determine whether to enable the enable signal. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
