| 摘要 |
PROBLEM TO BE SOLVED: To improve use efficiency of one semiconductor substrate without lowering efficiency of other fabrication processes, or to achieve cost reduction by effective use of a semiconductor substrate whose thickness is reduced due to repeated use in a process of manufacturing an SOI substrate. SOLUTION: In the process of manufacturing an SOI substrate, a semiconductor substrate is used as a bond substrate a prescribed number of times. Then, a first single crystal semiconductor substrate is bonded to a second single crystal semiconductor substrate, and a stacked-layer substrate formed from the first single crystal semiconductor substrate and the second single crystal semiconductor substrate bonded to each other is used as a bond substrate in a process of manufacturing an SOI substrate. COPYRIGHT: (C)2010,JPO&INPIT |
