| 摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to reduce a channel length due to high integration of a semiconductor device by forming a gate channel in an oblique direction. CONSTITUTION: A trench is formed by etching a semiconductor substrate(100). A conductive material is buried in the trench. A bit line contact region and a plurality of gate patterns are formed by separating the conductive material buried in the trench. A device isolation region(210) is defined by etching the semiconductor substrate after forming the bit line contact region. A bit line contact(250) is formed by successively stacking a barrier metal, a conductive layer, and a hard mask layer nitride layer.</p> |
